Electrical Resistivity of Some Chromium-Silicon Alloys

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Electrical resistivity (p) of chromium-silicon alloys, containing 0.4_6, 0.9_0, 1.3_7, 1.8_5, 2.7_4, 3.1_9, and 3.6_7 at.% silicon, has been measured over the temperature (T) range of 4 to 320°K. It was found that silicon markedly lowers the Neel temperature of chromium as determined from the p vs. T curves for the chromium alloys with 0.4_6, 0.9_0, and 1.3_7 at.% silicon. In addition, the alloy containing 1.3_7 at.% silicon show a sharp step-type anomaly at about 240°K. A similar anomaly occurs at lower temperatures in alloys containing 1.8_5 and 2.7_4 at.% silicon. In alloys with higher silicon content this anomaly is less-well defined. The dependence of the Neel temperature upon silicon concentration is briefly discussed from the viewpoint of the Fermi surface of chromium and the theory of Fedders and Martin. The effect of the energy gaps, associated with the onset of the antiferromagnetic ordering in the dilute chromium alloys, on the electrical resistivity just below the Neel temperature, is not solely responsible for the observed behavior. A minimum in the p vs. T curves at low temperatures is observable for all alloys except those containing 3.1_9 and 3.6_7 at.% silicon. This behavior is similar to that found in chromium-germanium solid solutions and appears to be due to either the Kondo or the Kim effect.
社団法人日本物理学会の論文
1967-11-05