The de Haas-van Alphen Effect in Antimony

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概要

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• The de Haas-van Alphen Effect in antimony single crystals was studied by means of a torque method at liquid helium temperature in magnetic fields up to 23 kilogauss, which were applied parallel to the trigonal-bisectrix, the trigonal-binary and the binary-bisectrix planes. New carrier oscillation periods were observed in addition to the periods corresponding to the tilted ellipsoidal Fermi surfaces proposed by Shoenberg, and the corresponding mass parameters were evaluated. These new carrier oscillation periods agrre with two possible models of the Fermi surface for the hole. They are discussed with reference to the number of carriers.

• 社団法人日本物理学会の論文
• 1964-08-05

著者

• Saito Yoshitami

  The Research Institute For Iron Steel And Other Metals

関連論文

• The de Haas-van Alphen Effect in Antimony
• The de Hass-van Alphen Effect in InBi
• The de Haas-van Alphen Effect in Antimony
• Spin Splitting of the Landau Levels in Bismuth Observed by the de Haas-van Alphen Effect
• The de Haas-Van Alphen Effect in Antimony
• The de Haas-van Alphen Effect of Zinc
• The de Haas-van Alphen Effect of InBi

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