Range of Excited Electrons and Holes in Metals and Semiconductors

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概要

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• The relaxation frequency for electron-electron scattering of an electron having energy more than a few k_BT above the Fermi level in a metal is calculated in the Born approximation by assuming a phenomenological Yukawa potential. The same method is then used to calculate the relaxation frequency of a hole having energy more than a few k_BT below the Fermi level in a metal and to calculate the relaxation frequency of an electron in a semoiconductor having spherical energy bands. For electrons in a metal our result is compared with the result obtained in a dielectric constant calculation.

• 社団法人日本物理学会の論文
• 1964-04-05

著者

• Sparks M.

  Microwave Laboratory W.w. Hansen Laboratories Of Physics Stanford University

• M0TIZUKI K.

  Microwave Laboratory,W.W. Hansen Laboratories of Physics, Stanford University

• M0tizuki K.

  Microwave Laboratory W.w. Hansen Laboratories Of Physics Stanford University:(present) Department Of

関連論文

• Range of Excited Electrons and Holes in Metals and Semiconductors

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