Mobility Change through Temperature-Dependent Mass in Semiconductors
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概要
- 論文の詳細を見る
If the energy of conduction electrons in a semiconductor is connected with the wave vector by a relation E(k)=(k^2/2m)(k^2-Bk^4), the mobility becomes temperature-dependent through the change of the effective mass with increasing temperature. In the present paper we estimate the mobility change through temperature-dependent mass by using a simple model for semiconductors. According to our result the effect does not seem to be important.
- 社団法人日本物理学会の論文
- 1962-09-05
著者
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Hasegawa Akira
The Institute For Salid State Physics University Of Tokyo
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Hasegawa A.
The Institute for Salid State Physics University of Tokyo
関連論文
- Electrical Resistance of Nickel
- Mobility Change through Temperature-Dependent Mass in Semiconductors