Triangular Patterns of Recrystallized Germanium Crystals Grown from Indium Melts

概要

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A germanium crystal with an indium pellet placed on its (111) plan was heated at various temperatures between 400 and 650℃ for alloying the indium and it was then rapidly cooled. In the recrystallized layer many defects were introduced by the plastic deformation which took place due to the thermal stress during cooling. Triangular patterns consisting of many dislocations were observed on the surface of the recrystallized layer. Dislocation density of the order of 10^8/cm^2 or greater was found. The origin of the triangular patterns is considered as such that piling up of 60°-dislocations multiplied from the Frank-Read source on a (111) plane gives rise to a stress concentration in the neighborhood, which in turn activates dislocation sources on a different (111) plane.
社団法人日本物理学会の論文
1962-08-05