Electrical and Optical Properties of Ges

概要

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High purity germanium monosulfide was prepared and its semiconducting properties were measured. Samples are obtained by the reaction of germanium and sulfur in vacuum at high temperature and reducing in ammonium gas to remove germanium disulfide. Dark resistivities of evaporated layers and polycrystalline blocks of GeS prepared by the above method are 10^<10>Ωcm or more. 1. The thermal activation energy for dark current is 0.74 1.0ev and about 0.25〜0.5ev at higher and lower temperature regions, respectively. 2. The absorption edge is found at about 700mμ from the optical measurements. 3. At room temperature the maximum spectral sensitivity of photo-conductivity is observed at the wavelength of about 700mμ in vacuum and of about 800mμ in room air. 4. The sign of the observed thermoelectric power is that of p type at high temperature, and its magnitude is about 1mv/deg.
社団法人日本物理学会の論文
1958-06-05