Pressure Dependence of Excitons in CsBr and CsI Thin Films : Condensed Matter: Electronic Properties, etc.

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概要

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• The absorption spectra of excitons in CsBr and CsI were observed under hydrostatic pressures. The first excitons Γ3/2 in CsBr and CsI showed blue shifts, and their absorption intensities decreased with increasing pressure. The second exciton in CsI showed a red shift., and its intensity decreased as pressure increased. We propose that the red shift of the second exciton causes the metallization of CsI under very high pressure. It is pointed out that the metallization of CsBr may not occur under very high pressure. The pressure dependence of Γl/2 excitons in CsBr and CsI was observed. The pressure coefficient of the Γ3/2 and Γ1/2 excitons is discussed in terms of the Bohr radius.

• 社団法人日本物理学会の論文
• 2001-02-15

著者

• AKASAKA Akihiko

  Department of Electronic Engineering,Faculty of Engineering,Kyushu Institute of Technology

• MASUNAGA Shoji

  Department of Electronic Engineering,Faculty of Engineering,Kyushu Institute of Technology

• Masunaga Shoji

  Department Of Electronic Engineering Faculty Of Engineering Kyushu Institute Of Technology

• Masunaga Shoji

  Department Of Electorinic Engineering Faculty Of Engineering Kyusyu Institute Of Technology

• Akasaka Akihiko

  Department Of Electronic Engineering Faculty Of Engineering Kyushu Institute Of Technology:(present)

関連論文

• Pressure Dependence of Direct Band Gap at Γ Point in Solids
• Pressure Dependence of Γ Excitons in Alkali Bromide Thin Films
• Temperature Dependence of Γ Excitons in Alkali Bromide Thin Films
• Pressure Dependence of Band Gaps in Solids
• Pressure Dependence of Excitons in CsBr and CsI Thin Films : Condensed Matter: Electronic Properties, etc.

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