High-Resolution Calculations of Exciton Fano Resonance in Semiconductor Quantum Wells

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概要

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• Fano resonance profiles of excitons in an asymmetric double quantum well of 165-Å-GaAs/14-Å-AlAs/48-Å-GaAs and in a shallow 200-Å-thick single quantum well of GaAs/Al_<0.045>Ga_<0.955>As are calculated with high accuracy by solving a multi-channel scattering problem based on the excitonic 4 × 4-Luttinger Hamiltonian. Anomalous excitons caused by oblique transitions between the different quantum wells of the asymmetric double quantum well system are found. Hole subband mixing is crucial in these novel exciton states and just Coulomb coupling without this effect does not suffice for pronounced peaks obtained by the calculations. Moreover, odd-parity light-hole exciton states are examined in both quantum well systems concerned here, and it is shown that these also manifest themselves as conspicuous peaks due to the hole subband mixing. Such two types of exciton Fano resonance are successfully identified as peaks observed in the existing experiments for high-resolution spectra.

• 社団法人日本物理学会の論文
• 2002-09-15

著者

• Hino Ken-ichi

  Institute Of Materials Science University Of Tsukuba

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