Current Modulation of Charge-Density-Wave Field-Effect Transistors with NbSe_3 Channel : Condensed Matter: Electronic Properties, etc.

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概要

• 論文の詳細を見る

• Mechanisms of the current modulation due to the gate bias in charge-density-wave field-effect-transistors (CDW FETs) with a NbSe_3 channel were investigated. It was clarified that the CDW dislocations do not modulate the CDW current and that the current is modulated under the gate electrode. The current modulation in the high-temperature CDW phase of NbSe_3 also was observed, for the first time.

• 社団法人日本物理学会の論文
• 2000-08-15

著者

• Kurita Ryo

  School Of Materials Science Japan Advanced Institute Of Science And Technology

関連論文

• Current Modulation of Charge-Density-Wave Field-Effect Transistors with NbSe_3 Channel : Condensed Matter: Electronic Properties, etc.

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