Photoelectron Spectroscopic Study of Coadsorbed States of Cs and O on GaAs(100)

概要

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The electronic states of O/Cs/GaAs(100) have been investigated by trsing ultraviolet photo-electron spectroscopy in order to understand the initial coadsorption kinetics on the way to thenegative electron affinity formation. It wars found that the energy positions of the Ga-3d andAs-3d peaks shift to the lower binding energy side by the first Cs deposition, while they shuftto the higher binding energy side during the n-th Cs deposition (n:3). It was also found thatbesides the appearance of oxidized As, the width of the Ga-3d peak becomes larger by the firstoxygen expostrre. In the case of the n-th Cs deposition and oxygen exposure, all photoelectronpeaks and the work f'trnction made parallel shif'ts in energy, which can be well interpreted interzns of the change in band bending. These restrlts indic?tte that the coadsorption kinetics canbe classified into two stages: At first Cs deposition and oxy'gen expostrre, both of Ga and Asreact with Cs and 0, restrlting in the rearrangenaent in the strr['ace layers, while at n-th Cs de-position and oxygen exposure, surf'ace l?tyers or clusters consisting of Cs, 0, As and Ga atomsare prodtrced.
社団法人日本物理学会の論文
1997-09-15