Ground State Properties in a Model of Quasi-Two-Dimensional Semiconductor

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概要

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• A renornaalization group treatnaent is applied to a model of (quasi)-two-dirnensional settaicon-ductor with a small band gulp. Phase diagrams are derived based on the numerical solutions of'the scaling equations. In the purely two-ditaaension?rl case, we find the singlet superconductingphase is induced by the repttlsive interband interaction in the presence of the attractive intra-band interaction. We also find the ['erroraaagnetistn and/or the ferroe[ectricity are stabilized inthe presence of the repulsive interband and intraband interactions. The eff'ects of the other kindsof interband and interplanar interactions are also discussed.

• 一般社団法人日本物理学会の論文
• 1997-07-15

著者

• Okamoto Hirosi

  Department of hysics,Faculty of Science,Saitama University

関連論文

• Ground State Properties in a Model of Quasi-Two-Dimensional Semiconductor

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