Thermodynamic Theory of Hot-Electron Transport in Silicon

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概要

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• Hot electron transport in a semiconductor is analyzed through a thermodynamictreatment. Analytic solution of the Boltzmann transport equation is obtained assum-ing extremely high electron-electron scattering condition. Particle and energy balanceequations are solved using rigorous particle and thermal energy flow expressions de-rived from the transport equation. Obtained velocity-field relationship for electronsin silicon with electrode distance longer than 10 pm is in good agreement with the experimental data. It is found that saturation velocity increases for shorter samples dueto electron cooling through electrodes. Moreover, for samples with length between0.1 pm to 1 pm, particle and thermal energy currents strongly couple. Because of thiscoupling, anomalous phenomena such as excess voltage and higher electrontemperature will appear.

• 1986-02-15

著者

• OHNO Yasuo

  Microelectronics Research Labs.,NEC Corporation

• Ohno Yasuo

  Microelectronics Research Labs. Nec Corporation

関連論文

• Thermodynamic Theory of Hot-Electron Transport in Silicon
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