Dependence of the Phase-Coherence Time in Weak Localization on Electronic Mean Free Path and Film Thickness

概要

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vagneto-resistance measurements on thin disordered films yield the phase-coherence time Tj of the conduction electrons (weak localization). The depend-once of o, on film thickness and residual resistivity are reported for disorderedAu, Ag and Mg films in the temperature range between 4.5 and 20 K. The re-sistivity of the films was varied between .13 and 1.1 x 10 ' Om. The temperaturedependence of 1/r, follows a 7'-law. The exponent is essentially two, but variesslightly with the resistivity. 1/rj depends much less on the resistivity than thelinear prediction of the thcory. No direct influence of the film thickness on r,was observed. This excludes the impurity induced Coulomb interaction as therelevant mechanism and suggests that c, is essentially determined by electron-phonon interaction. However, at the present time there is no theory availablethat reproduces the experimental results. Measurements of the (temperatureindependent) Hall-constant suggest that the thin films are rather homogeneousdespite their small thickness.
社団法人日本物理学会の論文
1985-09-15