The F Center near a Charged Dslocation
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概要
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The effect of the electric field due to a charged dislocation on the F Centerabsorption spectrum is studied by the method of ntoments for an Nail crystal.The elastic interaction of the center with the dislocation strain field is also con-sidered. We have calculated for these perturbations the fractional change in thepeak height of the F band. Calculations suggest that this quantity can be,measuredexperimentally and also that the effect of the electric field of a c:harged dislocationon the F center spectrum is stro:nger than that of an F center in a uniform field ofthe same strength.
- 社団法人日本物理学会の論文
- 1983-04-15
著者
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L. Marin-flores
Escuela De Altos Estudios Universidad De Sonora
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Ruiz-mejia C.
Escuela De Altos Estudios Universidad De Sonora:instituto De Fisica Unam
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RODRIGUEZ-MIJANGOS R.
Escuela de Altos Estudios,Universidad de Sonora
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Rodriguez-mijangos R.
Escuela De Altos Estudios Universidad De Sonora
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Marin-Flores J.L.
Escuela de Altos Estudios,Universidad de Sonora