Two Bands Model for Nonradiative Multiphonon Recombination at Deep-Level Defects in Semiconductors

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概要

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• Nonradiative multiphonon recombinations are described consistently aspairs of an electron capture and a hole capture with many electron representation.Adiabatic potentials are calculated as a sum of N electrons' energy and the poten-tial energy of N ions with taking care of the cooperation of the electron-latticeinteraction and the defect potential. It is shown that by the electron (hole) captureelectronic energy of an order of the thermal depth of an electron (hole) localizedat the defect is converted to the lattice energy. Every capture process can beenhanced by the transient lattice vibration triggered by the last opposite carriercapture. This actually occurs at almost every defects with lattice relaxationenergy being larger than the half of the band gap width, when both carriers areinjected with high density as is met in active laser diodes.

• 社団法人日本物理学会の論文
• 1982-09-15

著者

• Shinozuka Yuzo

  The Institute For Solid State Physics The University Of Tokyo:department Of Applied Science Faculty

• Shinozuka Yuzo

  The Institute For Solid State Physics The University Of Tokyo

関連論文

• Self-Trapping in Mixed Crystal : Clustering, Dimensionality, Percolation
• Two Bands Model for Nonradiative Multiphonon Recombination at Deep-Level Defects in Semiconductors

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