Bonding Electron Distribution in Silicon
スポンサーリンク
概要
- 論文の詳細を見る
The bonding electron distribution in silicon is determined from X-ray data.The numerical analysis is based on the PendeIl6suu?g data by Aldred and Hart(Proc. Roy. Soc. London A332 (1973) 223) for the 'conventional' reflections andby Fehlmann and Fujimoto (J. Phys. Soc. Jpn. 38 (1975) 208) for the 'forbidden'(222) reflection. It is shown that an accurate (222) structure amplitude aidsgreatly in interpreting the 'conventional' reflections in terms of Dawson's generalstructure amplitude formalism. The bonding features can be described by twonon-spherical scattering components plus a scalar deformation term (in the formof a radially contracted valence shell scattering amplitude). While the broadelectron density features can be accurately determined, caution should be exercisedin accepting the least-squares refined values f<>r the Debye-Waiter factor andfor the anomalous dispersion (due to the high correlation between theserarameters).
- 一般社団法人日本物理学会の論文
- 1979-07-15