Interference Effects of Γ and X Electric-Break-Throughs in Inversion Layers of Si
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概要
- 論文の詳細を見る
Interference effects of F and X electric-break-throughs in vicinal planes of Si(100) n-channel inversion layers are investigated by the use of the extended zoneeffective mass equation due to Ohkawa and Uemura. The surface band structureproposed by Tsui et al. is well explained by the interference effects. It is predictedthat mini-gaps except the second lowest lying one have a large dependence on anazimuthal component of tilting angles.
- 社団法人日本物理学会の論文
- 1979-03-15
著者
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J.ohkawa Fusayoshi
The Institute For Solid State Physics The University Ot Tokyo
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Ohkawa Fusayoshi
The Institute For Solid State Physics The University Of Tokyo
関連論文
- Orthogonality Catastrophe Due to Local Electron Interaction
- Interference Effects of Γ and X Electric-Break-Throughs in Inversion Layers of Si
- Multi-Valley Effective Mass Theory