Doping Effect in Chalcogenide Glasses

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概要

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• Electronic properties of doped chalcogenide glasses are discussed on the basis ofthe Street-Molt model by taking a finite width of gap states into account. Theconduction activation energy depends strongly on the shape of the gap stateenergy distribution. A rather gradual change in the activation energy with theincreas of impurity concentrations, often observed in experiments, is well repro-duced by introducing relatively small values for the distribution width. It isthen possible to estimate the fraction of dopant atoms, which actually changeconductivity, by comparing the results of the present model with experiments.

• 社団法人日本物理学会の論文
• 1979-02-15

著者

• YAMADA Eizaburo

  Central Reseatch Laboratory, Hitachi Ltd., Kokubunji

• Uda Tsuyoshi

  Central Research Laboratory Of Hitachi Ltd.

• Yamada Eizaburo

  Central Research Laboratory Of Hitachi Ltd.

関連論文

• Theory of Hot Electrons in Strong Magnetic Fields. I
• Doping Effect in Chalcogenide Glasses

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