Electric Break through in N-Channel Si Inversion Layer Tilted from (100)Surface

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概要

• 論文の詳細を見る

• Valley splittings in tilted surfaces are investigated. The explanation givenhere is due to electric break through, and is an. alternative c>ne for those by Shamet at. and Nakayama.

• 社団法人日本物理学会の論文
• 1978-10-15

著者

• Fusayoshi J.ohkawa

  The Institute For Solid State Physics The University Of Tokyo

関連論文

• Electric Break through in N-Channel Si Inversion Layer Tilted from (100)Surface

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