Luminescence from Electron-Hole Drops in Heavily Doped n-Type Germanium

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概要

• 論文の詳細を見る

• Lumnnescence spectra in As-doped Ge under intense optical excitation have beenobserved for varying donor concentration 2.0 x 10"to 4.9 x 10" cm ' and for varyingaverage density of electron-hole pairs (e-h pairs) in the crystal. l"rom the variation ofthe luminescence lineshape with the average density of e-h pairs and the theoreticalanalysis of lineshapes, it is found that even in heavily doped Ge tlne electron-hole drops(EHD) is stably formed in an atmosphere of metallic electrouts and ionized donorimpurities. Time resolved spectra at extremly high excitation levels confirm the EHDmodel of non-equilibrium plasma in' heavily doped Ge.

• 社団法人日本物理学会の論文
• 1977-08-15

著者

• NAKAMURA Arao

  Institute for Materials Research, Tnhokit University

• Nakamura Arao

  Institute for Solid State Physics,University of Tokyo

関連論文

• Magnetic Phase Diagrams and Lattice Structure of Nd_Ca_(Mn_M_y)O_3 (M = Ru, Cr and Sc)
• Photoconductivity Associated with Auger Recombination of Excitons Bound to Neutral Donors in Te-Doped Gallium Phosphide
• Luminescence from Electron-Hole Drops in Heavily Doped n-Type Germanium

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