The Variable Range Hopping Induced by Electron Spin Resonance in n-Type Silicon and Germanium

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概要

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• The esr-induced decrease in the resistance of doped silicon and germanium for concentrations in the intermediate region is discussed. The model put forward by Morigaki and co-workers, that the effect is due to hot electrons at a mobility edge, is shown to conflict with current ideas about carriers at mobility edges in non-crystalline systems, because the mobility there should decrease with increasing temperature. It is suggested that the carriers at the Fermi energy, which give conduction at low temperature by variable-range hopping, are responsible for the effect. A mechanism for the transfer of the esr energy due to the combined action of the exchange and the spin-orbit interaction is proposed.

• 社団法人日本物理学会の論文
• 1976-05-15

著者

• Mott Nevill

  Cavendish Laboratory

• KAMIMURA Hiroshi

  Cavendish Laboratory

• Kamimura Hiroshi

  Cavendish Laboratory:department Of Physics University Of Tokyo

関連論文

• The Variable Range Hopping Induced by Electron Spin Resonance in n-Type Silicon and Germanium
• Properties of the Hubbard Model for the Arbitrary Numbers of Up and Down Ship Electrons

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