Photo-Conductivity of Phosphorus-Ion-Implanted Zinc Selenide

概要

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A phosphorus-doped layer was implanted at room temperature in zinc selenide wafers with an ion dose of 5×10^<15> cm^<-2> at 180 kV, in which the wafers are fixed on the target to make their (110) faces normal to the incident beam. The impurity levels of phosphorus substituting for selenium have been determined by the photo-conductivity and photo-luminescence measurements; they are located at energies of ε_P≃0.11 eV and ε_<P'>∼0.36 eV above the valence band at about 100 K (the ε<P'> level is affected by the copper impurity; ε_n∼0.32 eV, contained natively in crystals). The measurements have revealed that the ε_P level in the origin of the blue emission-center. This study has also shown that crystalline materials should be tightly fixed to the target, to establish a low-resistance electrical contact with it, for implanting the doped layer which arranges the ionimplanted atoms in the positions specified to make the lowest energy fo the system for the arrangement.
社団法人日本物理学会の論文
1976-04-15