Low Temperature Electron-Irradiation Damage and Recovery in Pyrolytic Graphite

概要

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The electrical resistivity changes by electron irradiation at 5K and the isochronal annealing of resistivities in the temperature range 5-85K (Stage I) in pyrolytic graphite are studied in order to get information on point defects. Both the a-axis and the c-axis resistivity changes by irradiation are explained by the ordinary transport theory with defect scattering. Small recoveries in Stage I are shown to be composed of four substages: I_A(5-15K);I_B(15-45K); I_C(45-65K); and I_D(65-85K). Effects of the irradiating electron energy, the radiation-doping and the graphitization temperature of samples on these substages are also studied. Substages I_A and I_B may be caused by the correlated rearrangement of close Frenkel pairs, where interstitial atoms form loose coupling with their own vacancies. The activation energy for I_A is roughly estimated to be 0.027±0.004eV. In I_C the long-range free migration of interstitial atoms seems to occur.
社団法人日本物理学会の論文
1972-10-05