Tunneling Characteristics of Al-Al_2O_3-Bi Junctions

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概要

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• An elastic tunneling from a metal to a semimetal through an insulating layer is considered. Tunnel current and conductance have been calculated for the case when an energy band of the semimetal along the tunnel direction is non-parabolic, using the WKB approximation. It has been shown that tunnel conductance rises linearly from a voltage corresponding to a band edge and has peak or a bump at a saddle point. Experimentally, conductance voltage characteristics of Al-Al_2O_3-Bi junctions have been measured at 4.2, 77 and 300°K. Five peaks or bumps are observed at -0.77, -0.16, +0.16, +0.72 and +1.6 volts in the range of -1.2∼+2.2 volts. Energy band models of bismuth are proposed in order to explain an experimental conductance curve and compared with theoretical calculations by Golin and Mass. Current decrease with temperature rise has been observed and is attributed to the temperature dependence of dielectric constant of aluminum oxide.

• 社団法人日本物理学会の論文
• 1970-02-05

著者

• SAWATARI Yuji

  Department of Applied Physics, Faculty of Engineering, University of Tokyo

• Sawatari Yuji

  Department Of Applied Physics Faculty Of Engineering The University Of Tokyo

• ARAI Michio

  Department of Applied Physics, Faculty of Engineering, The University of Tokyo

• Arai Michio

  Department Of Applied Physics Faculty Of Engineering The University Of Tokyo

関連論文

• Tunneling Spectroscopy in Bi_2Te_3
• Tunneling Characteristics of Al-Al_2O_3-Sb Junctions
• Tunneling Characteristics of Al-Al_2O_3-Bi Junctions
• The Decay in Electrical Resistance in Evaporated Gold Films
• The Tunneling Conductance near Saddle Point in Semimetal-Insulator-Metal Junction
• Tunneling Characteristics of Al-Al_2O_3-Bi(Pb) and Bi(Te) Alloys Junctions
• Characteristics of Al-Al_2O_3-Bi Tunnel Junctions

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