Electrical and Crystallographic Studies of the System Cu_xNi_<1-x>Mn_2O_4

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概要

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• Electrical and crystallographic properties of the system Cu_xNi_<1-x>Mn_2O_4 have been studied. The negative deviation of lattice parameters from Vegard's linearity rule indicates that CuMn_2O_4 is a normal cubic spinel. The electrical resistivity temperature-behaviour obeys the relation ρ=ρ_0exp・(+(ΔE)/(kT)), and the value of activation energy (ΔE) for conduction in NiMn_2O_4 remains constant even after addition of 50 mole percent CuMn_2O_4. The thermoelectric power of NiMn_2O_4 changes sign from negative to positive by an addition of 20 mole percent CuMn_2O_4. It is concluded that in CuMn_2O_4 the Cu is present predominantly in Cu^<2+> valence state along with a small number of Cu^<1+> ions at tetrahedral sites. The electrical conduction in this system seems to take place through hopping of charge carriers between Mn^<3+> and Mn^<4+> ions at octahedral sites. A contribution to electrical conduction from tetrahedrally located Cu^<2+> and Cu^<1+> ions has also been considered.

• 社団法人日本物理学会の論文
• 1969-11-05

著者

• KSHIRSAGAR S.

  National Chemical Laboratory

• Kshirsagar S.T.

  National Chemical Laboratory

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