X-Ray Measurement of Lattice Strain Induced by Impurity Diffusion

スポンサーリンク

概要

• 論文の詳細を見る

• The lattice strain induced by the diffusion of phosphorus or boron in the (111) surface of silicon was studied by means of the intensity measurement of X-ray diffraction. In specimens with surface concentrations of phosphorus $6\times 10^{19}$ to $1.5\times 10^{21}$ cm-3 or boron $6\times 10^{18}$ to $1.2\times 10^{20}$ cm-3, the diffusion-induced strains were observed to extend in the range of $350{\sim}700$$\mu$ from the surface. The lattice strain at distance $D$ from the surface can be expressed by $\varepsilon{=}\varepsilon_{0}\exp(-\alpha D)$, where $\varepsilon_{0}$ is the maximum strain induced by the diffusion and depends on the surface impurity concentration and $\alpha$ is a constant of about 100 cm-1 for specimens with large dimension, ${\geq}1$ mm in thickness.

• 社団法人日本物理学会の論文
• 1975-01-15

著者

• Sato Noboru

  Sony Corporation Research Center

関連論文

• X-Ray Measurement of Lattice Strain Induced by Impurity Diffusion

スポンサーリンク