Determination of Hot Electron Temperature in n-Type InSb
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概要
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Precise hot electron temperature T_e was determined against electric field E for two n-InSb samples, of which exhaustion carrier concentration n_0 is 1×10<14> and 4×10^<14>cm^<-3> respectively, provided that lattice temperature T_L was at 4.2°K or below 2°K, and a transverse magnetic field B from 0 to 11.2kG was applied. T_e(E) was obtained by comparing resistivity and Hall coefficient at high E with those at ohmic E but at high T_L. The results revealed (1) effects of various parameters (B, n_0, T_L) on T_e(E), (2) a bend of T_e at 18°K irrespective of B, n_0 and T_L, (3) slow rise of T_e above 18°K, resulting in T_e∞E^<2/7> if B=0, (4) termination of reasonable T_e at 30°K and predominance of electron-electron scattering below 30°K. Inferences are given in terms of the two-band model.
- 社団法人日本物理学会の論文
- 1969-03-05