Observation of Discrere Energy Levels by Tunneling Spectroscopy
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概要
- 論文の詳細を見る
Tttnneling spectrtrna observation NV21S carried otnt on 21 Pb(Tl)Te filtn grown by hot-wall epitaxymethod. The observed spectrtmun characteristics on Ag -SiOr -Plo(Tl)Te.junctions reflect a seriesof discrete ener:v levels E. below the conduction band edge Pc, besides the cttmasi localizedTl iuaaptrrity states in the valence band. These discrete energy levels E,. are well expressed byE. - E. O -1.6/n' (n: integer) in eV, and show quite 21 good consistency with the result byEsaki et at," Frotn the investigation using the hydrogen-like ionization rnodel, these donor-likedeejc centers seetn to be re?'tlized only in SLICII 21 highly degener;tied p-type seuaaicondtrctor withthe minor n-type centers in the vicinity of' surf'ace region.
- 社団法人日本物理学会の論文
- 1999-01-15
著者
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Murakami H
Tokyo Gakugei Univ. Tokyo
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Murakami Hironaru
Department Of Electrical Engineering Osaka University
関連論文
- Observation of the Finite Superconducting Gap States in La_Sr_CuO_ by Electron Tunneling
- Observation of Multi-Stage Superconducting Gap States in Bi_2Sr_2CaCu_2O_x Crystal Surface by LT-STM/STS
- Observation of Discrere Energy Levels by Tunneling Spectroscopy