Electronic Structure of Yb_4As_3

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概要

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• Two kinds of substituted systems, Yb_4(As_<1-x>Se_x)_3 and Yb_4(As_<1-x>Sb_x)_3, were investigated to clarify the electronic structure of Yb_4As_3. By the comparison of the magnetic and transport properties of these systems, it is revealed that the Se-substitution causes the decrease of the Yb^<3+> ions, while the Sb-substitution causes the increase of the holes and the decrease of the Yb^<3+> ions simultaneously. These results indicate that the number of the holes on the valence p-band almost corresponds to the number of the Yb^<2+> ions on the one-dimensional magnetic chains in Yb_4As_3. This scenario could explain many physical properties of the substituted and non-doped Yb_4As_3.

• 社団法人日本物理学会の論文
• 2003-11-15

著者

• SHIRAKAWA Makoto

  Center for Low Temperature Science, Tohoku University

• AOKI Haruyoshi

  Center for Low Temperature Science, Tohoku University

• Aoki Hidekazu

  Graduate School Of Science Tohoku University:(present Address) The Institute For Solid State Physics

• Aoki Haruyoshi

  Center For Low Temperature Science Tohoku University

• OCHIAI Akira

  Graduate School of Science, Tohoku University

• Shirakawa Makoto

  Center For Low Temperature Science Tohoku University

• Ochiai Akira

  Graduate School Of Science Tohoku University

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