On the Theory of Pinch Effect in Semiconductors

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概要

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• It is found that in some semiconductors when the electric current exceeds a critical value I_c most of the current carriers are pinched in the centre of the sample. The current carriers near the boundary are pulled towards the centre, because of the magnetic field produced by the elements of the current in the interior. Bennett has solved the steady state problem and obtained conditions necessary for the pinch. He has neglected the effect of generations and recombinations of electron hole pairs. In the present paper the properties of a steady state pinch are studied taking account of carrier generation and recombination.

• 社団法人日本物理学会の論文
• 1967-01-05

著者

• Paranjape B.

  University Of Alberta Edmonton

• Paranjape B.V.

  University of Alberta Edmonton

関連論文

• On the Theory of Pinch Effect in Semiconductors

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