Transport Phenomena in InSb at High Electric and High Magnetic Fields

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概要

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• Transport properties and the magnetoresistance of single crystal InSb at 77°K have been studied for high applied electric (En) and magnetic (B) fields as functions of the two field intensities and the angle between them. Unusual oscillatoy behavior was observed in the angular dependence of the magnetoresistance at high magnetic field (ω_<0π<1) and high average current densities. A current-controlled negative resistance and a negative magneto-resistance were observed at angles between E and B of less than 30°. These observations can be understood qulitatively as the resuit of impact ionization deu to the presence of a transverse component of the applied magnetic field.

• 社団法人日本物理学会の論文
• 1966-07-05

著者

• Ando Koji

  Laboratories Rca Inc.

関連論文

• Anomalous Hall Effect in n-Type InSb in Pulsed High Electric Fields
• Velocity Reversal of Density Perturbation in Electron-Hole Plasmas in n-InSb
• Hot Carrier Double Injection in n-InSb
• Transport Phenomena in InSb at High Electric and High Magnetic Fields

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