Bulk Generation of Photocarriers via Two-Photon Absorption in Anthracene Single Crystal

概要

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Bulk photocarriers are produced in anthracene crystal by a Q-switched ruby laser. Laser light of photon energy 1.79eV is absorbed via two-photon efect leading to exciton states which then annihilate to create charged carriers. The observed dependence of the photocurrent on light intensity is of the fourth and second power in low and high intensity regions, respectively. The fourth law dependence is explained by the mechanism of exciton-exciton interaction for photocarrier generation. While in the high intensity regions, the current is strongly recombination limited. Recombination constant calculated from a recombination decay of photocurrent is about l0^<-7> cm^3 sec^<-1>. Temperature dependence of the intrinsic photocurrent was studied over a range from 300°K down to 100°K. The generated carrier density is characterised by an activation energy of 0.04eV. Mobility of holes perpendicuar to the ab plane can also be estimated from the data and was found to vary as T^<-n>, where n= 1.6, in this temperature range.
一般社団法人日本物理学会の論文
1966-12-05