Impurity-Sensitive Infrared Absorption in n-Type α-SiC

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概要

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• Optical measurements were made on several crystals of n-type α-SiC in the ranges 1 to 5μ(Range I)and 15 to 30μ (Range II) at 300°K and at 500°K. The absorption coefficient a is nearly proportional to the square of wavelength, increases with increasing donor concentration N_D and decreases with the rise in temperature in Range I. These results can be explained by the direct transition of electrons from donor levels to conduction band rather than the intraband transitions of the free carriers. The relative magnitudes of α in Ranges I and 11 support the above conclusion. In Range II, the value of a increases with the increase in N_D and depends weakly upon λ; the electrical susceptibility has a positive sign. The direct transition still seems to contribute appreciably in Range II.

• 社団法人日本物理学会の論文
• 1966-12-05

著者

• Imai Atsuo

  Central Research Laboratory Tokyo Shibaura Electric Co. Ltd.

• Imai A.

  Central Research Laboratory, Tokyo Shibaura Electric Co., Ltd.

関連論文

• Free Carrir Absorption in n-Type SiC
• Impurity-Sensitive Infrared Absorption in n-Type α-SiC

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