Single-Crystal Growth on α-Al_2O_3 Substrate

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概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 1966-11-05

著者

• Tsunoda Yoshihiro

  The Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation

• Tsunoda Yoshihiro

  The Electrical Communication Laboratory N.t.t.

関連論文

• Measurement of Impurity Profile Effect in N on N^+ Silicon Epitaxial Layers
• Estimation of Impurity Profile in N on N^+ Silicon Epitaxial Layers
• Single-Crystal Growth on α-Al_2O_3 Substrate
• Effect of Atmosphere on Arsenic Diffusion in Silicon
• Masking Effects of Antimony Diffusion in Silicon from a Doped Oxide Source
• Vapor Etching of Sapphire by H_2-SiHCl_3 Gas Mixtures

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