Infrared Absorption Due to Donor Electrons in Semiconductors

概要

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Haga's theory of infrared absorption due to the direct transition of donor electrons to the lowest conduction band is used to study the wavelength dependence of the infrared absorption coefficients of GaAs, GaSb, AlSb, Ge and InSb in the region 3-10μ at low temperatures varying from 4.2 to 100°K from one specimen to another. The concentration of the donor electrons is treated as adjustable parameter. Good agreement between theory and experiment is obtained for AlSb and Ge for reasonable values of the donor electron concentration. The present calculations for GaSb (77°K) and GaAs (100°K) suggest that the absorption due to donor electrons is negligible and the free electron absorption is dominating as shown by Haga previously. For InSb, both the free electron absorption and the absorption due to donor electrons fail to explain the observed absorption at 83 and 13°K.
社団法人日本物理学会の論文
1966-10-05