Conduction Phenomena in Monosilicides of Iron Group Transition Elements
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概要
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The electrical resistivity, Hall coefficient and thermoelectric power have been measured over the temperature range from 4.2 to 800°K on Co_1 -〓Si(x〓0.05), Co_1-〓Si(x 〓0.04) and, Co_1-〓Si(x〓0.10) solid solutions. The specimen is n-type when x=0. With increasing x, the specimens of Co_1- 〓Si become more n-type, while in the specimens of Co_1-〓Si and Co_1-〓Si, the contribution of hole conduction in-creases. The experimental data are qualitatively interpreted in terms of the overlapping band structure scheme, which is appropriate for Co_1-〓Si solid solutions. It is concluded that the replacement of cobalt with manganese or chromium produces approximately one hole per atom, while the replacement of cobalt with nickel produces approximately one electron per atom in the solid solutions.
- 社団法人日本物理学会の論文
- 1965-06-05
著者
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Asanabe Sizuo
Fundamental Research Laboratory Nippon Electric Co. Ltd.
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Asanabe Sizuo
Fundamental Research Laboratory Nippon Electric Company Limited
関連論文
- Conduction Phenomena in Monosilicides of Iron Group Transition Elements
- Semiconducting Properties of Chromium Disilicide
- Semiconducting Properties of SnSe_2 and GeSe_2
- Phase Diagram of the Partial System of MnSi-Si