Screened Impurity Potential in Si

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概要

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• The wave-number-dependent dielectric function is calculated for Si crystal along the three principal symmetry axes taking the detailed band structure into account. The effects of the core state, the higher bands and the Umklapp terms are found to be rather small. The value of 10.82±0.70 is obtained for the static dielectric constant in zero wave number limit, which is to be compared with the observed value of 11.7. Rather strong anisotropy and anomalous maximum are observed for relatively mall k.

• 社団法人日本物理学会の論文
• 1965-05-05

著者

• Nara Hisashi

  Department Of Physics Tohoku University

関連論文

• Theory of Impurity Levels
• Wave-Number-Dependent Dielectric Function of Germanium
• Screened Impurity Potential in Si

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