Electron Spin Resonance of a Photosensitive Center in CdS
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概要
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Spin resonance was observed in undoped CdS under illumination. The experiments were performed at liquid helium temperature range (mainly at 1.5°K) and at X-band. Single crystals of CdS were grown by sublimation from powder in quartz crucible at 1.100℃. Under an illumination a resonance line of approximately gaussian shape was observed with anisotropic g-values as follows: g〃=1.783±O.003, g⊥=1.764±O.O03 (at 1.5°K) where g〃 and g⊥ are the g-values parallel and perpendicular to the c-axis of the crystal respectively. It was found that light in the region around 524mμ was most effective in producing the resonance line. The above g-values are close to those of shallow donors in CdS such as Cl (g〃=1.787±0・O02, g⊥=1・772±0・002 at 1.4°K), Ga and oxygen center. This fact shows that the photosensitive center responsible for the above mentioned line is an electron at some defect level which lies near the edge of the conduction band. The center has been tentatively identified as a sulfur vacancy trapping an electron on the basis of the following facts. 1) If the wave function of electron trapped at a sulfur vacancy is assumed to be described by a linear combination of the four nearest neighboring cadmium ion orbitals directed toward the vacancy, the g-shift of the center is given by δg=-〓ΔE (1) The above approximation neglects the anisotropy of the center coming from the crystal field of trigonal symmetry at a vacancy site. The value 0f λ is estimated to be 0.067 eV from the atomic energy levels for free cadmium atom. The experimental value of δg (the average of δg〃 and δg⊥) can be explained in Eq. (1) by assuming 0.29 eV for E. Since ΔE is the energy separation between the ground state and a relevant excited state, it is generally less than the trap depth of the center. The trap depth of sulfur vacancy may be inferred from other experiments to be 0.4 eV which is near the value of 0.29 eV.
- 一般社団法人日本物理学会の論文
- 1964-07-05
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