Effect of External Illumination on Carrier Lifetime in Semiconductors

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概要

• 論文の詳細を見る

• The lifetime of excess carriers in a nondegenerate semiconductor which is illuminated with a light in fundamental absorption band and a longer wavelength light is discussed. The recombination equations for many recombination-center levels in the presence of a steady external illumination are formulated. For steady-state case these equations can be solved exactly, but transient solutions are obtained only for specific cases. These results show that both steady-state and transient lifetimes are identical for small densities of recombination centers. This simple lifetime for single recombination-center level case is discussed.

• 社団法人日本物理学会の論文
• 1959-11-05

著者

• Okada Jun'ichi

  Matsuda Research Laboratory Tokyo Shibaura Electric Co.

関連論文

• Effect of External Illumination on Carrier Lifetime in Semiconductors

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