Excess Noise in Narrow Germanium p-n Junctions

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概要

• 論文の詳細を見る

• Excess noise has been studied on narrow alloyed p-n junctions fabricated on heavily doped p-type and n-type germanium with less than 200Å junction width, which exhibit inverted rectification and negative resistance in the forward direction. Considerable 1/f noise has been observed in a forward range, the character of which is stable and surface insensitive. Moreover, the noise was found to be mainly associated with the excess forward current that is peculiar to narrow p-n junctions. Measurements were made also at low temperatures down to 77°k on both noise and static characteristics. The origins of the excess forward current and the associated excess noise were discussed in connection with the crystal imperfection.

• 社団法人日本物理学会の論文
• 1958-11-05

著者

• Esaki Leo

  Sony Corporation

• YAJIMA Tatsuo

  Technical Research Laboratory, Broadcasting Corporation of Japan

• Yajima Tatsuo

  Technical Research Laboratory Broadcasting Corporation Of Japan:(present)department Of Physics Facul

• Yajima Tatsuo

  Technical Research Laboratory Broadcasting Corporation Of Japan

関連論文

• Excess Noise in Narrow Germanium p-n Junctions
• Emitter Current Noise in Junction Transister

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