A Computer Study on the Metal-Nonmetal Transitions in Heavily Doped Semiconductors

概要

論文の詳細を見る
A general review on the existing theoretical investigations by the authors who focus their attention on different aspects of the impurity states in heavily doped semiconductors suggests the necessity of precise information on the Mott-Hubbard-Anderson (MHA) model in order to advance a unified quantitative study on the properties of impurity bands in a wide range of impurity concentrations. A self-consistent unrestricted Hartree-Fock pseudocluster calculation has been performed to investigate the roles of various bands in doped semiconductors. While the lower and the upper Hubbard band are well defind at low concentrations, the donor-excitonic states are important at higher concentrations where the upper Hubbard band is pushed into the conduction band. The so modified MHA model can still explain almost all the experimental results. This pseudocluster model allows exact numerical calculations for the thermodynamic, magnetic and transport properties, as well as the compensation effect and the location of mobility edges.
理論物理学刊行会の論文
1982-12-20