3AA08 電圧印加により形成された光散乱性N^*液晶組織(III)

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概要

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• We have reported electro-optic characteristics of the light scattering texture induced by applying the burst electric field. Formation of the texture might depend on LC aligning materials. For example, we could not find the texture in case of polyimide (PI) but in case of polyvinylalchol (PVA). In this paper, formation mechanism of the light scattering texture are studied, experimentally. By observing the LC alignment on rubbed PVA films, we find only a few deviation in the direction of the extinction, maximum 10 degrees. Next, we try to iatroduce some deviation of aligning direction into rubbed PI films. We could get the light scattering textures in N^* LC cells with PI films irradiated by polarized UV lights. Then, deviation of aligning directions seems to be necessary to explain the formation mechanism of the light scatering structure.

• 日本液晶学会の論文
• 1997-09-24

著者

• 廣嶋 鋼紀

  山梨大・工

• 中込 一浩

  山梨大・工

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• 3AA08 電圧印加により形成された光散乱性N^*液晶組織(III)
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