2B05 強誘電性・反強誘電性液晶相転移I : ANNNI模型と分子長軸向きの自由度
スポンサーリンク
概要
- 論文の詳細を見る
The successive phase transitions in ferro- and antiferro-electric smetics have been discussed on the bases of the ANNNI model with the third next nearest neighbour interaction. Here, the nearest neighbour interacting modeh with variables indicating the sense of the molecular long axis is introduced to certify that model. By taking the summation over all states of these variables in the partition function the system is transformed into the effective Hamiltonian with long range interactions and many body forces. In the minimal theory where the range of the interaction is taken into account up to the third nearest neighbour, the assumptions appearing in the above ANNNI model are justified. In the intermediate phases excerpt for SmC^* and SmC^*_A the ordering of the molecular sense is shown to be induced by the bias due to the order of layer stacking.
- 日本液晶学会の論文
- 1996-09-30
著者
関連論文
- 1PE02 強. 反強誘電性液晶の電場中の相図
- 8a-YA-8 J_3をもつANNNI模型の一様電場中の振る舞い
- 3PC01 外場中のIsing模型 : 反強誘電性液晶V型応答解明の試み
- 1PE03 2軸性外場中の競合のあるXY模型の基底状態
- 8a-YA-10 層構造反強誘電相の外場応答
- 8a-YA-9 イジング模型とXY模型のクロスオーバーII
- 28a-WF-6 イジング模型とXY模型のクロスオーバー
- 2B06 強誘電性・反強誘電性液晶相転移II : J_3、J_の効果と中間相
- 2B05 強誘電性・反強誘電性液晶相転移I : ANNNI模型と分子長軸向きの自由度