イオンビームスパッタ法を用いたマイクロアクチュエータ用 : TiNi形状記憶合金薄膜形成

概要

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TiNi shape memory alloy has been recently investigated for use in microactuators because of the high power to volume ratio. Conventional sputtering methods, such as RF and DC sputtering and magnetron sputtering, have previously been used by other workers in order to deposit TiNi thin films. As deposited films produced by these methods are amorphous, and are then crystallised typically by annealing at 500 ℃ for 1 hour in order to exhibit the shape memory effect. These deposition methods have invariably used alloyed targets to grow thin films. In this investigation, an Ion Beam Sputter Deposition (IBSD) method has been used by which argon ions are used to bombard non-alloyed targets. The thin films grown by this technique demonstrate the characteristics of the shape memory effect. Films have been characterised by electrical resistivity and change of resistance against heating and cooling temperature, giving physical properties in excellent agreement with those quoted in the literature. Compositional and density measurements were done by X-ray reflectometry and were consistent with equi-atomic composition and nominal density for TiNi.
公益社団法人精密工学会の論文
2002-01-05