Study of Infra-red Absorption in Irradiated Silicon and Germanium
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概要
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The effect of epithermal neutrons and Co^<60> gamma-rays on infrared absorption spectra at room temperature of silicon and germanium at room temperature was studied. No significant effect of neutrons nor of gamma-rays was detected in low resistivity germanium at this temperature. In silicon the intensity of the 9μ band due to oxygen impurity was assessed to slowly decrease with the integrated neutron flux. Upon annealing, the 9μ band silicon was observed to be significantly affected by neutron flux of the order of 10^<16> n/cm^2. The 16.5μ band observed in silicon was found to be independent of oxygen concentration and its possible source of absorption was suggested. Annealing of these two bands caused suppression and a slight shift of the absorption bands, sometimes accompanied by the production of "satellite" bands. Little effect of gamma-rays was observed except that it caused wavelength shift and a decrease in 16.4μ when annealed at 75℃.
- 東海大学の論文
- 1969-03-31
著者
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Matsumura Hiroshi
Department Of Neurosurgery And Pediatrics Kansai Medical School
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Matsumura Hiroshi
Department Of Physics Faculty Of Science Tokai University
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- Study of Infra-red Absorption in Irradiated Silicon and Germanium