電子ビーム蒸着によるCdS薄膜の光導電性

概要

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The main purpose of the present paper is to investigate recrystablization processes due to annealing. CdS films prepared by electron beam deposition have been annealed at various annealing conditions; the photosensitivity and the spectrosensitivity of the films have been measured. Furthermore, measurements of the photoexcited electron lifetime under diffrent illumination level have been carried out to discuss photoconduction mechanisms of evaporated polycrystalline CdS films. Photoconductive films of CdS have been obtained at substrate temperetures between 70℃ and 100℃, and at annealing temperatures between 400℃ and 500℃. In the heat-treated films, a remakable increase in photosensitivity is produced. The photosensitivity is strongly dependent on the resistivity of the films. The photosensitivity increase monotonically as the resistivity increases, but it is not recognized below the resistivities of 10^4Ω-cm. The characteristics of spectro-photosensitivity of CdS films show the maximum sensitivity at the wavelength of 5340A. Photoconductivity of CdS films is caused primarily by an increase in the carrier density with photoexcitation, and the mobility decreases considerably as the illumination increases. The electron lifetime depends on photo-excitation intensity; it decreases accordingly to the -1/4 power of excitation intensity.
近畿大学の論文
1977-12-01