ACTIVE CONTROL OF NUCLEATION IN THE DIAMOND SYNTHESIS PROCESS BY THE REDUCING FLAME WITH A HIGH-VOLTAGE PULSE(Engineering)
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概要
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A controlled method of crystal growth for diamond films has been established that invo ves improving the surface quality by the reducing flame with a high-voltage pulse discharge. The nucleatior density, the crystal diameter, and the surface roughness can be actively controlled by applying the high-voltage pulse to the substrate. It is also possible that a pulse current over 40mA changes the crystal surface direction. When ion flux flows to the substrate, the nucleation density of the diamond increases with the pulse voltage, and smoothed surface films can be obtained. On the other hand, when electron flux flows to the substrate the surface morphology hardly. changes. This is due to the fact that the CH_3^+ ion flux which is considered to be a diamond precursor, increases with the electric field and becomes higher than the CH_3 thermal flux multiptied by the sticking probability. This phenomenon results in an increase of the supersaturation of the radicals, on the substrate and in an enhancement of nucleation. Simultaneously, the CH_3^+ sticking coefficient itself increases, both because of the high incidence speed of CH_3^+ flux into the substrate and high directionality.
- 舞鶴工業高等専門学校の論文
- 2003-03-10