Ti_<1-x>Hf_xSe_2系の半導体的性格と相転移
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概要
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The electrical resistivity p and Hall coefficient RH have been investigated on pressed powder samples of Ti<1-x>Hf_xSe_2 and sublimation grown crystals of TiSe_2 from 22 K to 300 K. With decreasing temperature the resistivity exhibits a peak below the onset temperature of the superlattice in the case of small x. Then at lower temperatures a semiconductinglike resistivity is observed, suggesting that the initial band gap is positive in the mixed system Ti<1-x>Hf_xSe_2. While the resistivity ρ at 22 K is also found to be larger than ρ at 300 K for both pressed samples and sublimation grown crystals of TiSe_2, this increase appears to be due to internal strain possibly present in the samples. The results indicate that the mechanism for driving the phase transition is mainly relevant to an excitonic electronhole instability.
- 島根大学の論文