Correlation between the Sign of Hall Coefficient and Lattice Instability in Substituted TiSe_2
スポンサーリンク
概要
- 論文の詳細を見る
The temperature dependence of the electrical resistivity and the Hall coefficient at 290 K for single crystals of Ti_<1-x>f_xSe_2 are presented. The resistive anomaly due to lattice instability appears in the range of 0 ≤ x ≤ 0.35 where the Hall coefficient is found to be positive. The sign of the Hall coefficient is changed to minus for x ≥ 0.4. The results show that holes as carriers play a fundamental role in the lattice instability in TiSe_2.
- 島根大学の論文
著者
関連論文
- Effect of Barium Doping on High-T_c Superconductor Pb_2Sr_2Y_Ca_Cu_3O_y
- Laser Raman Scattering from Single Crystals of RuS_2 (Pyrite)
- High-T_c Superconductivity in Copper Oxide Compounds
- Characterization of Bi-Doped High-Tc Superconductor SmBa_2Cu_3O_y by X-Ray Diffraction
- Correlation between the Sign of Hall Coefficient and Lattice Instability in Substituted TiSe_2
- Application of a Microcomputer in Resistivity Measuring System
- Crystal Structure and Superconductivity in the La-Ba-Ca-Cu-O System
- On the Electrical Resistivity of TiSe_2 near the Transition Temperature