n-GaInPのラマン散乱の研究
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概要
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Raman scattering from coupled plasmon -LO phonon modes has been studied in Se-doped n-Ga0.5In0.5P alloy grown by metal-organic vapor phase epitaxy (MOVPE) with various carrier concentrations. Two coupled modes have been observed in the Raman spectra from (100) surfaces of the alloys. Carrier concentration dependences of their frequencies and dampings are used to identify the two modes as copuled plasmon -LO phonon modes. Wave-vector dependences of the two modes have been confirmed with use of different lines of the excitation lasers. The Raman spectra show the clear existence of two LO phonon branches at 〜 380 cm^<-1> and 〜 362 cm^<-1>, respectively. It is discussed on the Raman data that the behavior of 〜 362 cm^<-1> LO phonons differs from that of 〜 380 cm^<-1> LO phonons for the coupling with plasmons.
- 香川高等専門学校の論文
- 2003-06-30